2006. 4. 24 1/6 semiconductor technical data KMB050N60P n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies. features v dss = 60v, i d = 50a drain-source on resistance : r ds(on) =0.022 @v gs = 10v qg(typ.) = 32nc improved dv/dt capacity, high ruggedness maximum junction temperature range (175 ) maximum rating (tc=25 ) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 g d s characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current @t c =25 i d 50 a @t c =100 35 pulsed (note1) i dp 200 single pulsed avalanche energy (note 2) e as 493 mj repetitive avalanche energy (note 1) e ar 12 mj peak diode recovery dv/dt (note 3) dv/dt 7.0 v/ns drain power dissipation tc=25 p d 120 w derate above 25 0.8 w/ maximum junction temperature t j 175 storage temperature range t stg -55 175 thermal characteristics thermal resistance, junction-to-case r thjc 1.24 /w thermal resistance, case-to-sink r thcs 0.5 /w thermal resistance, junction-to- ambient r thja 62.5 /w
2006. 4. 24 2/6 KMB050N60P revision no : 1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.07 - v/ drain cut-off current i dss v ds =60v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 20v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =25a - 0.018 0.022 dynamic total gate charge q g v ds = 48v, i d = 50a v gs =10v (note4,5) - 32 42 nc gate-source charge q gs - 8 - gate-drain charge q gd - 12 - turn-on delay time t d(on) v dd = 30v i d =25a r g = 25 (note4,5) - 20 50 ns turn-on rise time t r - 100 210 turn-off delay time t d(off) - 80 170 turn-off fall time t f - 85 180 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1050 1365 pf reverse transfer capacitance c rss - 70 90 output capacitance c oss - 460 600 source-drain diode ratings continuous source current i s v gs 2006. 4. 24 3/6 KMB050N60P revision no : 1 drain current i d (a) r ds(on) - i d on - resistance r ds(on) ( ? ) 0.00 0.03 0.05 0.04 0.01 0.02 0100 50 150 200 v gs = 10v v gs = 20v r ds(on) - t j 0 50 -100 -50 100 200 150 normalized on resistance 0.0 0.5 2.5 1.0 1.5 2.0 junction temperature t j ( ) c v gs = 10v i ds = 25a normalized breakdown voltage bv dss bv dss - t j -100 -50 0.8 0.9 1.2 1.0 1.1 050 100 200 150 junction temperature tj ( ) c v gs = 0v i ds = 250 i s - v sd 0.2 0.4 0.8 0.6 1.2 1.0 1.6 1.4 reverse drain current i s (a) source - drain voltage v sd (v) 10 0 10 1 10 2 175 c 25 c gate - source voltage v gs (v) 10 0 10 1 68 410 2 i d - v gs drain current i d (a) 10 2 -55 c 175 c 25 c i d - v ds drain - source voltage v ds (v) 10 -1 10 0 10 1 10 0 10 1 10 2 drain current i d (a) v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v v ds = 30v 250 s pulse test v gs = 0v 250 s pulse test
2006. 4. 24 4/6 KMB050N60P revision no : 1 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 20 10 15 25 5 35 30 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 1000 2000 500 1500 3000 3500 2500 10 -1 10 0 10 1 10 1 10 1 10 3 10 0 10 0 10 2 10 2 10 -1 frequency = 1mhz 0 10 30 50 20 40 60 75 175 150 125 50 100 25 drain current i d (a) i d = 50a i d - t j v ds = 30v v ds = 48v c rss t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) 1ms 10ms 100 s dc square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 r th - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 single pul se 0.05 0.02 0. 0 1 0.2 0.1 junction temperature t j ( ) c transient thermal impedance [ / w] c c oss c iss
2006. 4. 24 5/6 KMB050N60P revision no : 1 - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f t p 10% 90% - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 50v 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v gs
2006. 4. 24 6/6 KMB050N60P revision no : 1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
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